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BUF410 high voltage fast-switching npn power transistor n stmicroelectronics preferred salestype n high voltage capability n very high switching speed n minimum lot-to-lot spread for reliable operation n low base-drive requirements applications: n switch mode power supplies n motor control description the BUF410 is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide rbsoa. the buf series is designed for use in high-frequency power supplies and motor control applications. ? internal schematic diagram march 2002 absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5 v) 850 v v ceo collector-emitter voltage (i b = 0) 450 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 15 a i cm collector peak current (t p < 5 ms) 30 a i b base current 3 a i bm base peak current (t p < 5 ms) 4.5 a p tot total dissipation at t c = 25 o c125w t stg storage temperature -65 to 150 o c t j max operation junction temperature 150 o c 1 2 3 to-218 1/6
thermal data r thj-case thermal resistance junction-case max 1 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be = 10 w) v ce = 850 v v ce = 850 v t c = 100 o c 0.2 1 ma ma i cev collector cut-off current (v be = -1.5 v) v ce = 850 v v ce = 850 v t c =100 o c 0.2 1 ma ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 200 ma l = 25 mh 450 v v ebo emitter base voltage (i c = 0) i e = 50 ma 7 v v ce(sat) * collector-emitter saturation voltage i c = 5 a i b = 0.5 a i c = 5 a i b = 0.5 a t c =100 o c i c =10 a i b = 2 a i c =10 a i b = 2 a t c =100 o c 0.8 0.5 2.8 2 v v v v v be(sat) * base-emitter saturation voltage i c = 5 a i b = 0.5 a i c = 5 a i b = 0.5 a t c =100 o c i c =10 a i b = 2 a i c =10 a i b = 2 a t c =100 o c 0.9 1.1 1.5 1.5 v v v v di c /dt rate of rise on-state collector current v cc = 300 v r c = 0 t p = 3 m s i b1 = 0.75 a t c =25 o c i b1 = 0.75 a t c =100 o c i b1 = 3 a t c =100 o c 45 100 60 a /m s a /m s a /m s v ce (3 m s) collector-emitter dynamic voltage v cc = 300 v r c = 60 w i b1 = 0.75 a t c =25 o c i b1 = 0.75 a t c =100 o c 2.1 8 v v v ce (5 m s) collector-emitter dynamic voltage v cc = 300 v r c = 60 w i b1 = 0.75 a t c =25 o c i b1 = 0.75 a t c =100 o c 1.1 4 v v t s t f t c inductive load storage time fall time cross over time i c = 5 a v cc = 50 v v bb = - 5 v r bb = 1.2 w v clamp = 400 v i b1 = 0.5 a l = 0.5 mh 0.8 0.05 0.08 m s m s m s t s t f t c inductive load storage time fall time cross over time i c = 5 a v cc = 50 v v bb = - 5 v r bb = 1.2 w v clamp = 400 v i b1 = 0.5 a l = 0.5 mh t c =100 o c 1.8 0.1 0.18 m s m s m s v cew maximum collector emitter voltage without snubber i c = 5 a v cc = 50 v v bb = - 5 v r bb = 1.2 w i b1 = 0.5 a l = 0.5 mh t c = 125 o c 500 v t s t f t c inductive load storage time fall time cross over time i c = 5 a v cc = 50 v v bb = 0 r bb = 0.3 w v clamp = 400 v i b1 = 0.5 a l = 0.5 mh 1.5 0.04 0.07 m s m s m s BUF410 2/6
electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit t s t f t c inductive load storage time fall time cross over time i c = 5 a v cc = 50 v v bb = 0 r bb = 0.3 w v clamp = 400 v i b1 = 0.5 a l = 0.5 mh t c =100 o c 3 0.15 0.25 m s m s m s v cew maximum collector emitter voltage without snubber i c = 5 a v cc = 50 v v bb = 0 r bb = 0.3 w i b1 = 0.5 a l = 0.5 mh t c = 125 o c 500 v t s t f t c inductive load storage time fall time cross over time i c = 10 a v cc = 50 v v bb = -5 v r bb =1.2 w v clamp = 400 v i b1 = 2 a l = 0.25 mh 1.9 0.06 0.12 m s m s m s t s t f t c inductive load storage time fall time cross over time i c = 10 a v cc = 50 v v bb = - 5 v r bb =1.2 w v clamp = 400 v i b1 = 2 a l = 0.25 mh t c =100 o c 3.2 0.12 0.3 m s m s m s v cew maximum collector emitter voltage without snubber i cwoff = 15 a v cc = 50 v v bb = - 5 v r bb = 1.2 w l = 0.1 mh i b1 = 3 a t c =125 o c 400 v inductive load switching test circuit 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier BUF410 3/6
turn-off switchingtest waveforms (inductive load). forward biased safe operating areas. reverse biased safe operating area storage time versus pulse time. turn-on switching test waveforms. BUF410 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 C 16.2 C 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r C 12.2 C 0.480 ? 4 4.1 0.157 0.161 r a c d e h f g l6 l3 l2 l5 1 2 3 to-218 (sot-93) mechanical data p025a BUF410 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUF410 6/6

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